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Transistor
A three-terminal active semiconductor
device that provides
current amplification. There are
two general types of transistors in use today: (1) the
bipolar transistor
(often called the bipolar junction transistor, or BJT), and
(2) the field-effect
transistor (FET).
The bipolar
transistor, composed of two closely coupled P-N
junctions, is bipolar in that both electrons
and holes are involved in the
conduction process. A bipolar
transistor has base, emitter
and collector electrodes, and
is a current-controlled device
(able to deliver a change in output voltage in response to a
change in input current) with a
low input impedance. This type of transistor is widely used
as an amplifier and is also a key component in oscillators,
high-speed integrated circuits, and switching circuits.
Like diodes, all transistors are intrinsically
light-sensitive (accordingly, most are packaged in opaque
containers of some sort). Bipolar
transistors designed specifically to take advantage of
this light sensitivity are called phototransistors.
Meanwhile, the field-effect
transistor is a unipolar device, as its conducting
process primarily involves only one kind of charge carrier.
It can be built either as a metal-oxide-semiconductor
field-effect transistor (MOSFET)
or as a junction field-effect transistor (JFET).
A field-effect
transistor has gate, source,
and drain electrodes and is a
voltage-controlled device with a high input impedance.
A bit of history
Originally, devices that needed to amplify a signal (such as
radios and the first computers) used the vacuum-tube
amplifier. This was the original "triode": a glass tube
containing a heater filament, a heated emitter
plate (a.k.a., the cathode) that
emits electrons, a collector
plate (a.k.a., the anode) that
collects the electrons once they
have accelerated through the tube, and a metal grid in
between. The name "triode" came from the fact that the
device had three active elements -- the anode,
the cathode, and the grid. Small
changes to the voltage of the grid cause large changes in
the electron current
flowing to the collector plate.
Remove the grid, and the device becomes a vacuum-tube
diode.
Vacuum-tube triodes work for many purposes, but were
slow, bulky, fragile, and consumed copious amounts of power.
For years, researchers around the globe tried to make a
solid-state version of the device in an attempt to enable
the creation of smaller, faster, less power-hungry
electronics. The field-effect
transistor was patented by the German scientist Julius
Lilienfeld in 1926, although he likely never got it to work.
Meanwhile, the German physicist Robert Pohl made a
solid-state amplifier in 1938 using salt as the semiconductor
-- it worked, but reacted to signals too slowly to be of any
use. Finally, three scientists (John Bardeen, Walter
Brattain, and William Shockley) working at Bell Laboratories
discovered how to make the first workable solid-state
transistor on December 23, 1947.
Their first working device was a "point-contact
transistor" -- Shockley's team had modified a "cat's
whisker"-style diode by placing two
fine metal wires close together on the surface of a piece of
N-type germanium. The result could
also be called a "triode", because it has three terminals --
the two free ends of the diodes and
their common junction. A voltage applied to the junction
controls a current flowing through the other two terminals.
Point-contact transistors, though, were essentially
laboratory curiousities -- they were hard to make
(performance depended on the exact placement of the wires on
the germanium), and none too reliable (since they responded
nearly as much to their surroundings as to their input
signals). Research continued.
A month after the birth of the point-contact transistor,
Shockley realised that Russell Ohl's P-type
and N-type semiconductors
in effect made it possible to build a solid-state analog of
the vacuum tube triode. The solution was to sandwich a thin
P-type semiconductor
between two N-type pieces,
resulting in two P-N
junctions (i.e., two diodes)
face to face. A current applied
to the P-type layer could then
control the current between the
two N-type regions. The resulting
bipolar transistor proved much more reliable than the
point-contact transistor. In the bipolar transistor (as in
all modern transistors), the vital junctions between the
N-type and P-type
layers are buried deep within the semiconductor crystal
where they cannot be affected by their surroundings.
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